Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation
نویسندگان
چکیده
We investigate anisotropical and geometrical aspects of hexagonal structures of Silicon Carbide and propose a direction dependent interpolation method for oxidation growth rates. We compute threedimensional oxidation rates and perform one-, two-, and three-dimensional simulations for 4Hand 6H-Silicon Carbide thermal oxidation. The rates of oxidation are computed according to the four known growth rate values for the Sið0001Þ, að11 20Þ, mð1 100Þ, and C-face ð000 1Þ. The simulations are based on the proposed interpolation method together with available thermal oxidation models. We additionally analyze the temperature dependence of Silicon Carbide oxidation rates for different crystal faces using Arrhenius plots. The proposed interpolation method is an essential step towards highly accurate three-dimensional oxide growth simulations which help to better understand the anisotropic nature and oxidation mechanism of Silicon Carbide. 2016 Elsevier Ltd. All rights reserved.
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